Investigation of reflectance from multi-layered dielectric films, 1970

Item — Multiple Containers

Identifier: b2089520

Staff Only

Scope and Contents

From the Collection:

The collection consists of theses written by students enrolled in the Monmouth College graduate Physics program. The holdings are bound print documents that were submitted in partial fulfillment of requirements for the Master of Science degree.

Dates

Creation: 1970

Creator

Klohn, Kenneth L. (Kenneth Leon) (Author, Person)
Hieslmair, Hans (1932-2021) (Thesis advisor, Person)

Conditions Governing Access

The collection is open for research use. Access is by appointment only.

Access to the collection is confined to the Monmouth University Library and is subject to patron policies approved by the Monmouth University Library.

Collection holdings may not be borrowed through interlibrary loan.

Research appointments are scheduled by the Monmouth University Library Archives Collections Manager (723-923-4526). A minimum of three days advance notice is required to arrange a research appointment for access to the collection.

Patrons must complete a Researcher Registration Form and provide appropriate identification to gain access to the collection holdings. Copies of these documents will be kept on file at the Monmouth University Library.

Extent

2 Items (print books) : 80 [Part A] and 55 [Part B] pages ; 8.5 x 11.0 inches (28 cm).

Language of Materials

English

Additional Description

Abstract

An investigation was conducted to determine the reflectivity of multi-layered dielectric films. The theory was developed for oblique and normal incidence, including vertical and horizontal linear polarization, for single, double and higher order stacks by considering the propagation of a plane, time-harmonic electro-magnetic wave through a stratified medium, including the use of characteristic matrices. Computer programs were written and the theoretical curves obtained for reflectance of ZnS, SiO, MgF₂ and combinations of ZnS-SiO and ZnS-MgF₂ as a function of film thickness, wavelength of incident radiation and angle of insidence of radiation. Experiments were conducted to measure the relative reflectivity of evaporated ZnS, SiO and SnS-SiO films as a function of film thickness. The experimental results are compared with theory. Recommendations are made for improving the experimental system for the possible extension of this work to determine absolute reflectivity values.