Vacuum deposition of silicon dioxide thin films by a CO₂ laser, 1971

Item — Call Number: MU Thesis Lev

Identifier: b2088711

Staff Only

Scope and Contents

From the Collection:

The collection consists of theses written by students enrolled in the Monmouth College graduate Physics program. The holdings are bound print documents that were submitted in partial fulfillment of requirements for the Master of Science degree.

Dates

Creation: 1971

Creator

Levine, Stanley H. (Stanley Howard) (Author, Person)
Hieslmair, Hans (1932-2021) (Thesis advisor, Person)

Conditions Governing Access

The collection is open for research use. Access is by appointment only.

Access to the collection is confined to the Monmouth University Library and is subject to patron policies approved by the Monmouth University Library.

Collection holdings may not be borrowed through interlibrary loan.

Research appointments are scheduled by the Monmouth University Library Archives Collections Manager (723-923-4526). A minimum of three days advance notice is required to arrange a research appointment for access to the collection.

Patrons must complete a Researcher Registration Form and provide appropriate identification to gain access to the collection holdings. Copies of these documents will be kept on file at the Monmouth University Library.

Extent

1 Items (print book) : 88 pages ; 8.5 x 11.0 inches (28 cm).

Language of Materials

English

Additional Description

Abstract

Most conventional evaporation sources consist of resistance heated metals supporting the evaporant. They have the disadvantage of reacting with the evaporant. This results in the deposition of contaminated films. Evaporation with an electron beam eliminates this problem. However, electron beam evaporation can not be accomplished easily at higher pressures.

An investigation was conducted to determine the feasibility of using a CO₂ laser to produce thin films of SiO₂. A helium-neon laser was used to monitor the thickness of the film. The theory of reflectance from a thin film was developed. Computer programs were written and theoretical curves obtained to determine the index of refraction of the thin film using the measurements of reflectivity. Microscope pictures were taken for analysis of the quality of the films.

It was found that high quality films of SiO₂ can be produced at pressures greater than 10 microns. Recommendations were made for the improvement of the experimental system.