Abstract The technique of using a high power CO₂ laser to deposit films of SiO₂ was studied, and an attempt was made to dope the films with a metallic impurity. Resistivity and dielectric constants were measured to determine the quality of the undoped films and to establish the effect of doping. It was found that the laser evaporation technique yielded the best results when the target material was granular rather than solid and the substrate was heated above 300°F. The films produced were not...

Abstract A CO₂ laser was employed as the heat source to deposit films of SiO₂. The report discusses the measurement of the refractive indices of the thin transparent films produced. Investigation into the various techniques available for measuring the index of refraction led to the selection of Abeles method for determination of the Brewster angle. A helium-neon laser was used as the source of incident polarized light, while a selenium photocell monitored the reflected...

Abstract Most conventional evaporation sources consist of resistance heated metals supporting the evaporant. They have the disadvantage of reacting with the evaporant. This results in the deposition of contaminated films. Evaporation with an electron beam eliminates this problem. However, electron beam evaporation can not be accomplished easily at higher pressures. An investigation was conducted to determine the feasibility of using a CO₂ laser to produce thin films of SiO₂. A helium-neon...