Study of the conduction properties of an amorphous semiconducting material over a wide temperature range, 1972

Item — Call Number: MU Thesis Bos

Identifier: b2088561

Staff Only

Scope and Contents

From the Collection:

The collection consists of theses written by students enrolled in the Monmouth College graduate Physics program. The holdings are bound print documents that were submitted in partial fulfillment of requirements for the Master of Science degree.

Dates

Creation: 1972

Creator

Bosco, Charles D. (Author, Person)
Mallikarjun, S. (Srikantaiah) (1933-2024) (Thesis advisor, Person)
Smith, Robert O. (Robert Owens) (Thesis advisor, Person)

Conditions Governing Access

The collection is open for research use. Access is by appointment only.

Access to the collection is confined to the Monmouth University Library and is subject to patron policies approved by the Monmouth University Library.

Collection holdings may not be borrowed through interlibrary loan.

Research appointments are scheduled by the Monmouth University Library Archives Collections Manager (723-923-4526). A minimum of three days advance notice is required to arrange a research appointment for access to the collection.

Patrons must complete a Researcher Registration Form and provide appropriate identification to gain access to the collection holdings. Copies of these documents will be kept on file at the Monmouth University Library.

Extent

1 Items (print book) : 27 pages ; 8.5 x 11.0 inches (28 cm).

Language of Materials

English

Additional Description

Abstract

Equipment was designed and built for measuring the resistance of an amorphous semiconducting bulk sample over the temperature range of -104 C to 300 C. The sample composition was 55% arsenic, 35% tellurium, and 10% germanium. The temperature range from -104 C to -41 C was found to exhibit extrinsic conductivity, while the range from -17 C to 100 C was explained on the basis of intrinsic conductivity. The intermediate temperature range of -41 C to -17 C was described as a range where both lattice and impurity scattering were taking place simultaneously.

Nucleation and growth of the sample were proposed as an explanation of the resistance behavior above 100 C. A maximum rate of nucleation is thought to occur at 125 C and the maximum rate of crystal growth is indicated at 215 C. The phase transformation is proposed on the basis of discontinuties in the resistance curve and the observation of resistance changes at constant temperatures above 100 C. Further evidence for a phase transformation is given by the failure of the resistance of the sample to return to its original value after the temperature is brought down from 300 C.

Calculations [of the activation energy] are made from the intrinsic regions of both the high and low temperature experiments and both values are in agreement. The value is 0.518 electron volts[.]

Partial Contents

Abstract -- Acknowledgements -- Table of contents -- 1. Introduction -- 2. Experimental procedure -- 3. Results and conclusions -- 4. Conclusions -- Appendix -- References.