Abstract Equipment was designed and built for measuring the resistance of an amorphous semiconducting bulk sample over the temperature range of -104 C to 300 C. The sample composition was 55% arsenic, 35% tellurium, and 10% germanium. The temperature range from -104 C to -41 C was found to exhibit extrinsic conductivity, while the range from -17 C to 100 C was explained on the basis of intrinsic conductivity. The intermediate temperature range of -41 C to -17 C was described as a range where both...