Abstract An experimental study of a reflection cavity scheme used to measure changes in the conductivity of semiconductor samples is presented. The germanium sample with associated microwave circuitry acts as a highly sensitive system where by in the null condition almost complete absorption occurs. Changes in conductivity from the null point will cause a sharp increase in reflected microwave power. This change in reflected power may be used to measure a change in conductivity, or in a device...

Abstract The absorption of 10.6 μ energy by excess carriers in germanium is the basis for this study of carrier profiles within the bulk of intrinsic material. Excess carriers are injected into blocks of germanium with dimensions in the millimeter range. The material is probed by a fine beam from a CO2 laser and the energy in the exit ray is measured to determine carrier absorption. Carrier density patterns in the material are found to correspond to an excess carrier plus...

Abstract Equipment was designed and built for measuring the resistance of an amorphous semiconducting bulk sample over the temperature range of -104 C to 300 C. The sample composition was 55% arsenic, 35% tellurium, and 10% germanium. The temperature range from -104 C to -41 C was found to exhibit extrinsic conductivity, while the range from -17 C to 100 C was explained on the basis of intrinsic conductivity. The intermediate temperature range of -41 C to -17 C was described as a range where both...