Abstract This is a report on an experimental investigation into the switching characteristics of the As-Te-Ge glass undertaken in the Physics Department of Monmouth College. The report describes the preparation of the amorphous samples, discusses associated semiconductor theory, and presents a discussion on the results obtained. Graphs of log resistance vs 1/T for this glassy system are presented which clearly show an intrinsic conduction range down to about 40°C. Some evidence in the date of an...

Abstract The utilization of the reciprocal lattice and various methods or techniques, made possible through this lattice's use, will be explained in this Thesis [sic]. In general, these techniques can be classified into two common routines in which one is associated with the symmetrical structures (orthorhombic, hexagonal, tetragonal) and the other with the more complicated structures (monoclinic or triclinc). The first routine is to take the...

Abstract Herein are presented the results of an experimental study of a ternary calcogenide glass of composition: 55 at.% As, 35 at.% Te, 10 at.% Ge. X-ray diffraction measurements of powder samples of the glass were made over a temperature range from room temperature (~23° C) to 440° C. These measurements show the glass to be in a non-cyrstalline amorphous state or short-range order state from room temperature up to a temperature of 220° C. From 220° to approximately 440° the material seems to...

Abstract This thesis presents the qualitative and quantitative procedures used in reflected polarized light microscopy. Conoscopic observations, supported by orthoscopic observations, were used in the analysis of crystals formed in the heat-treated amorphous semiconductor As-Te-Ge. The heat treatment was varied in a successful attempt to obtain larger crystals. This usage of reflected polarized light microscopy elucidated the conditions for which future researchers should strive before attempting...

Abstract Equipment was designed and built for measuring the resistance of an amorphous semiconducting bulk sample over the temperature range of -104 C to 300 C. The sample composition was 55% arsenic, 35% tellurium, and 10% germanium. The temperature range from -104 C to -41 C was found to exhibit extrinsic conductivity, while the range from -17 C to 100 C was explained on the basis of intrinsic conductivity. The intermediate temperature range of -41 C to -17 C was described as a range where both...