Electrical properties of vacuum deposited SiO₂ films by means of a CO₂ laser, 1972

Item — Call Number: MU Thesis Vag

Identifier: b2088487

Staff Only

Scope and Contents

From the Collection:

The collection consists of theses written by students enrolled in the Monmouth College graduate Physics program. The holdings are bound print documents that were submitted in partial fulfillment of requirements for the Master of Science degree.

Dates

Creation: 1972

Creator

Vaga, Tonis (Author, Person)
Hieslmair, Hans (1932-2021) (Thesis advisor, Person)

Conditions Governing Access

The collection is open for research use. Access is by appointment only.

Access to the collection is confined to the Monmouth University Library and is subject to patron policies approved by the Monmouth University Library.

Collection holdings may not be borrowed through interlibrary loan.

Research appointments are scheduled by the Monmouth University Library Archives Collections Manager (723-923-4526). A minimum of three days advance notice is required to arrange a research appointment for access to the collection.

Patrons must complete a Researcher Registration Form and provide appropriate identification to gain access to the collection holdings. Copies of these documents will be kept on file at the Monmouth University Library.

Extent

1 Items (print book) : 30 pages ; 8.5 x 11.0 inches (28 cm).

Language of Materials

English

Additional Description

Abstract

The technique of using a high power CO₂ laser to deposit films of SiO₂ was studied, and an attempt was made to dope the films with a metallic impurity. Resistivity and dielectric constants were measured to determine the quality of the undoped films and to establish the effect of doping. It was found that the laser evaporation technique yielded the best results when the target material was granular rather than solid and the substrate was heated above 300°F. The films produced were not decomposed by the evaporation process as inticated by resistivities greater than 3x10¹⁰Ω-m and a dialectric constant which compares favorably to bulk SiO₂. Doping with silver appreciably increased the dielectric constant without a drastic increase in resistivity.

Partial Contents

1. Introduction -- 2. Evaporation of silicon dioxide -- 3. Electrical measurements -- 4. Discussion and conclusions -- 5. Appendices -- 6. References.