Reflected polarized light microscopy of the crystalline material As-Te-Ge, 1974

Item — Call Number: MU Thesis Bar

Identifier: b2088649

Staff Only

Scope and Contents

From the Collection:

The collection consists of theses written by students enrolled in the Monmouth College graduate Physics program. The holdings are bound print documents that were submitted in partial fulfillment of requirements for the Master of Science degree.

Dates

Creation: 1974

Creator

Bardall, Kenneth (1943- ) (Author, Person)
Mallikarjun, S. (Srikantaiah) (1933-2024) (Associated name, Person)

Conditions Governing Access

The collection is open for research use. Access is by appointment only.

Access to the collection is confined to the Monmouth University Library and is subject to patron policies approved by the Monmouth University Library.

Collection holdings may not be borrowed through interlibrary loan.

Research appointments are scheduled by the Monmouth University Library Archives Collections Manager (723-923-4526). A minimum of three days advance notice is required to arrange a research appointment for access to the collection.

Patrons must complete a Researcher Registration Form and provide appropriate identification to gain access to the collection holdings. Copies of these documents will be kept on file at the Monmouth University Library.

Extent

1 Items (print book) : 46 pages ; 8.5 x 11.0 inches (28 cm).

Language of Materials

English

Additional Description

Abstract

This thesis presents the qualitative and quantitative procedures used in reflected polarized light microscopy. Conoscopic observations, supported by orthoscopic observations, were used in the analysis of crystals formed in the heat-treated amorphous semiconductor As-Te-Ge. The heat treatment was varied in a successful attempt to obtain larger crystals. This usage of reflected polarized light microscopy elucidated the conditions for which future researchers should strive before attempting to obtain crystallographic data through application of this form of microscopy. This type of microscopy is better utilized on larger and more isolated crystals than the ten micron, densely packed ones obtained in this project.

It is shown qualitatively that the crystals formed in this semiconductor are of isotropic phase and contain no anistropic phases. This conclusion lends some support to the X-ray analyis performed by Gerald Talbot. He concluded that only one crystalline phase existed in the As-Te-Ge system.

Physical Description

Figures include duplicates of black-and-white plates.

Partial Contents

Abstract -- Table of contents -- List of figures -- Introduction -- Experimental procedures -- Results -- Conclusions -- Appendix I -- Appendix II -- Appendix III -- References.