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Reflected polarized light microscopy of the crystalline material As-Te-Ge, 1974

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Identifier: b2088649
Abstract This thesis presents the qualitative and quantitative procedures used in reflected polarized light microscopy. Conoscopic observations, supported by orthoscopic observations, were used in the analysis of crystals formed in the heat-treated amorphous semiconductor As-Te-Ge. The heat treatment was varied in a successful attempt to obtain larger crystals. This usage of reflected polarized light microscopy elucidated the conditions for which future researchers should strive before attempting...
Dates: 1974