Theoretical analysis of semiconductors used in a microwave reflection system, 1971

Item — Multiple Containers

Identifier: b2087724

Staff Only

Scope and Contents

From the Collection:

The collection consists of theses written by students enrolled in the Monmouth College and Monmouth University graduate Electronic Engineering programs. The holdings are bound print documents that were submitted in partial fulfillment of requirements for the Master of Science degree.

Dates

Creation: 1971

Creator

Giordano, Robert (Author, Person)
Jacobs, Harold, 1917-1983 (Thesis advisor, Person)

Conditions Governing Access

All analog collection holdings are limited to library use only.

Researchers seeking to photocopy collection materials must complete an Application to Photocopy Form.

In some cases, photocopying of collection materials may be performed by the Monmouth University Library staff.

The Monmouth University Library reserves the right to limit or refuse duplication requests subject to the condition of collection materials and/or restrictions imposed by the collection creators or by the United States Copyright Act.

Permission to examine, or copy, collection materials does not imply permission to publish or quote. It is the responsibility of the researcher to obtain such permissions from both the copyright holder and Monmouth University.

Extent

2 Items (print book) : 60 pages ; 8.5 x 11.0 inches (28 cm).

Language of Materials

English

Additional Description

Abstract

The reflections of microwaves from a low conductivity semiconductor, lossy, air space, metal arrangement have been studied. At any given frequency by selecting the thickness of the semiconductor, loss and the distance to the metal reflector, complete absorption of microwave energy can be obtained. It is shown that very small changes in semiconductor conductivity, semiconductory thickness, and distance to the metal reflector result in measureable reflected power. This technique will allow electrodeless measurements of both bulk and thick film semiconductor properties and may have application as a large area detector of infrared radiation.