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Diodes, Schottky-barrier

 Subject
Subject Source: Other

Found in 1 Collection or Record:

The tungsten-p type silicon point contact diode, 1971

 Item — Multiple Containers
Identifier: b2088683
Abstract The tungsten-p type silicon point contact diode was investigated as a video detector from 90 GHz to 474 THz. The diode responsivity was examined with respect to the applied pressure of the contact and the D. C. characteristics. An upper limit of approximately 2 THz is established for electromagnetic field detection, with thermoelectric effects appearing as the frequency is lessened. Typical responsivity values of 100v/w at 90 GHz, 2v/w at 890 GHz, 10⁻²v/w at...
Dates: 1971